DEPT OF DEFENSE
- Publicado
- 13 oct 2026
- Vence
- 27 oct 2026, 20:00 GMT-4
- Place of performance
- Place of performance not specified
- NAICS
- 334413
- Set-aside
- Small Business Set Aside - Total
Special NoticeActive
Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION · NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Detalles del Contrato
- ID de Aviso
- 80NSSC27946811Q
- Tipo de Oportunidad
- Special Notice
- Oficina
- NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
- Fecha de Publicación
- Tuesday, October 13, 2026
- Fecha Límite de Respuesta
- Oct 16, 2026, 5:00 PM EDT
- Código PSC
- 5961
- Reserva
- Competencia Abierta Completa
- Lugar de Desempeño
- Cleveland, OH, 44135, USA
- Estado
- Active
Descripción
NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT. NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASAs Technical End User Team. We are currently only requesting Capability Statements.
Documents and contact
No public document links were provided with this record.
Check the official notice for attachments and access requirements ↗
- Contact
- Lindsey McLellan
- lindsey.m.mclellan@nasa.gov
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