Available for Licensing:High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies

High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies Description INL researchers have successfully established the parameters necessary for the deposition of high-quality superconducting zirconium nitride (ZrN) using molecular beam epitaxy (MBE). Key parameters include growth rate, temperature, flux ratios of zirconium (Zr) and nitrogen (N), and the choice of substrate. These parameters significantly impact the crystalline quality of the ZrN, which in turn affects its physical properties. Additionally, novel methods have been developed to induce unconventional superconductivity in conventional superconductors like ZrN. Key Benefits Superior Quality: MBE allows for fine-tuned growth parameters, resulting in to